Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Resistive Switching Properties of HfO[sub 2]-Based ReRAM with Implanted Si/Al Ions

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Highly Stable Radiation-Hardened Resistive-Switching Memory

The heavy ion radiation effects on the Pt/HfO<inf>2</inf>/Ti resistive switching memory

The Heavy Ion Radiation Effects On The Pt/Hfo2/Ti Resistive Switching Memory

Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory

Investigation on the Response of TaO $_{\rm X}$ -Based Resistive Random-Access Memories to Heavy-Ion Irradiation

The Tid Effects Of Rram Based Oxide Material

Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

Effects of Different Dopants on Switching Behavior of HfO2-based Resistive Random Access Memory

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations

Gd-Doping Effect On Performance Of Hfo2 Based Resistive Switching Memory Devices Using Implantation Approach