Gd-Doping Effect On Performance Of Hfo2 Based Resistive Switching Memory Devices Using Implantation Approach

Haowei Zhang,Lifeng Liu,Bin Gao,Yuanjun Qiu,Xiaoyan Liu,Jing Lü,Ruqi Han,Jinfeng Kang,Bin Yu

DOI: https://doi.org/10.1063/1.3543837

IF: 4

2011-01-01

Applied Physics Letters

Abstract:An implantation doping approach is implemented to fabricate Gd-doped HfO2 resistive random access memory (RRAM) devices. The significantly enhanced performances are achieved in the Gd-doped HfO2 RRAM devices including improved uniformity of switching parameters, enlarged ON/OFF ratio, and increased switching speed without obvious reliability degradation. This performance improvement in the Gd-doped HfO2 RRAM devices is clarified to the suppressed randomicity of oxygen vacancy filaments' formation and the reduced oxygen ion migration barrier induced by trivalent Gd-doping effect. The achieved results also demonstrate the validity of implantation doping approach for the fabrication of RRAM devices. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543837]