Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Physical mechanism of resistive switching and optimization design of cell in oxide-based RRAM

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-Rram.

High‐Entropy Oxides‐Based Memristor: Outstanding Resistive Switching Performances And Mechanisms in Atomic Structural Evolution

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories

Unipolar Resistive Switching and Mechanism in Gd-doped-TiO2-based Resistive Switching Memory Devices

Oxide-based RRAM Switching Mechanism: A New Ion-Transport-recombination Model

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Modulating the resistive switching stability of HfO2-based RRAM through Gd doping engineering: DFT+U

Design Of High-Performance Memristor Cell Using W-Implanted Sio2 Films

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM