Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Resistive Switching Behaviours and Novel Device Applications of Metal-Oxide-Si/Ge Structures

Silicon Introduced Effect On Resistive Switching Characteristics Of Wox Thin Films

Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices

Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device with Cu Oxidizable Electrode

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

A CMOS Compatible WOx RRAM with Optimized Switching Operations

The Parasitic Effects Induced by the Contact in RRAM with MIM Structure

Nanoporous Silicon Oxide Memory

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory