Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Silicon Introduced Effect On Resistive Switching Characteristics Of Wox Thin Films

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device with Cu Oxidizable Electrode

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

Performance And Characteristics Of Double Layer Porous Silicon Oxide Resistance Random Access Memory

Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-Rram.

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Resistance Switching Characteristics of Ag/ZnO/graphene Resistive Random Access Memory

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Resistive Switches and Memories from Silicon Oxide.

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Ultra-Low Switching Voltage Induced by Inserting SiO 2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

The role of dianglin bonds in resistance switching behaviors of SiOx - Based RRAM

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

Multilevel Resistive Switching Characteristics In Ag/Sio2/Pt Rram Devices