Abstract:Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS2)-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfOx)-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfOx layer (approximate to 15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage.

Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography

Integrated One Diode-One Resistor Architecture in Nanopillar Siox Resistive Switching Memory by Nanosphere Lithography

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Nanoporous Silicon Oxide Memory

Resistive Switches and Memories from Silicon Oxide.

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

Investigation of Edge- and Bulk-Related Resistive Switching Behaviors and Backward-Scan Effects in SiOx-based Resistive Switching Memory

Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Dynamic Moderation of an Electric Field Using a SiO2 Switching Layer in TaOx ‐based ReRAM

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications