Abstract:The HfOx/FeOx semiconductor heterojunction self‐rectifying‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and high performance synaptic plasticity is developed for neuromorphic computing. A comprehensive study involving HR‐TEM in situ observation and band model is carried out for this self‐rectifying‐RRAM, showing a great potential in large scale array integration. Sneak‐path current is one of the biggest barriers for large‐scale passive memristor array integration. An ideal self‐rectifying resistance random access memory (SR‐RRAM) is a desirable solution but it has not been demonstrated today for optimizing comprehensive indexes for neuromorphic computing. The HfOx/FeOx semiconductor heterojunction SR‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and synaptic plasticity such as paired‐pulse facilitation (PPF) and the spike‐timing‐dependent plasticity (STDP) for artificial intelligence recognition is developed using the unidirectional conductivity feature of p‐n junction. The electron hopping, tunneling, and blocking in this semiconductor heterojunction that is verified by the energy band mode based on UV photoelectron spectroscopy (UPS) technology and low‐energy inverse photoelectron spectroscopy (LEIPS) and in situ high resolution transmission electron microscopy (HR‐TEM) observation plays a dominant role in the self‐rectifying analog switching behaviors. This work provides energy‐band engineering for the large‐scale memristor array integration, representing a significant advancement in hardware for neuromorphic computing.

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{alo}_{y}$ Incorporation into $\hbox{hfo}_{x}$ Switching Dielectrics

High Performance Unipolar AlOy/HfOx/Ni Based RRAM Compatible with Si Diodes for 3D Application

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Forming-free and Self-Rectifying Resistive Switching of the Simple Pt/TaOx/n-Si Structure for Access Device-Free High-Density Memory Application.

Rectifying Characteristics and Implementation of N-Si/hfo2 Based Devices for 1D1r-Based Cross-Bar Memory Array

Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Self‐Rectifying Switching Memory Based on HfOx/FeOx Semiconductor Heterostructure for Neuromorphic Computing

Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

Bipolar One Diode–one Resistor Integration for High-Density Resistive Memory Applications

A Novel Nitrogen-Doped SiOx Resistive Switching Memory with Low Switching Voltages

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices