Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices

Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Forming-Less Unipolar Taox-Based Rram with Large Cc-Independence Range for High Density Memory Applications

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

High Performance Unipolar AlOy/HfOx/Ni Based RRAM Compatible with Si Diodes for 3D Application

Forming-Free HfO 2 -Based Resistive Random Access Memory by X-Ray Irradiation

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Ta0x/Hf02-based RRAM with Self-Selective Feature Caused by Current Compliance Modulation

High Performance Multilevel Data Storage in Tatin/Hfox/Pt Based Rram Using Bipolar and Unipolar Combined Switching Mode

Scaling and Operation Characteristics of HfOx Based Vertical RRAM for 3D Cross-Point Architecture