Abstract:Oxide based RRAM memories are considered as potential candidates to replace floating gate memory devices [1-2] due to their proven low power operation , high switching speed [3] and compatibility with conventional CMOS back-end-of-line process. The working principle relies on the reversible change of the oxide layer’s resistance between two levels namely HRS (High Resistance State) and LRS (Low Resistance State). This resistance change has been widely attributed to the creation/reconstruction and rupture of a localized or multiple conductive filaments (CF) in the oxide layer. Various companies [4] and research laboratories [5] have adopted the HfOx solution as the active oxide layer that casts the memory effect. However, the process of the CF creation responsible for resistive switching and the oxide layer degradation are yet to be fully explored. In this paper we use first principles calculations to investigate Frenkel-Pair formation (FP) in HfO2 that play an important role in the CF creation. Depending on the electrode nature, its work function and reactivity with oxygen, we bring more insight into the FP formation leading to CF creation and device reliability. We show that oxygen active electrodes with low work function, like Ti, improve device reliability. Finally, endurance tests on a memory cell with Ti as top electrode were performed to assess cycling stability. Endurance up to 108 cycles, with optimized set conditions has been demonstrated. [1] H. Akinaga and H. Shima, Proc. IEEE, vol. 98, p. 2237, 2010.[2] V. Sriraman et al., IPCSIT, vol. 32, p.101, 2012 [3] B. Govoreanu et al., IEDM Tech. Dig., pp. 729-732, 2011 [4] Ch. Walczyk et al., J. Vac. Sci. Technol. B 29, 01AD02 (2011) [5] Y.S.Chen et al., IEDM Tech. Dig,pp. 31.3.1 - 31.3.4,2011.

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Investigation of the Forming Process under UV Illumination in HfO2-based Resistance Random Access Memory with a Transparent Electrode

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Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Thermally Stable Transparent Resistive Random Access Memory Based on All‐Oxide Heterostructures

&Amp;#x03b3;-Ray Irradiation Effects on TiN/HfO<inf>x</inf>/Pt Resistive Random Access Memory Devices

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Investigation on the Response of TaO $_{\rm X}$ -Based Resistive Random-Access Memories to Heavy-Ion Irradiation

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Solving the issue of increasing forming voltage during device miniaturization in hafnium oxide-based resistive access memory using high-k sidewall material

Controllable Formation of Resistive Switching Filaments by Low-Energy H+ Irradiation in Transition-Metal Oxides

Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability

HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory

Highly Stable Radiation-Hardened Resistive-Switching Memory