Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

A Resistive Device with Electrolyte As Active Electrode

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Forming-free and Self-Rectifying Resistive Switching of the Simple Pt/TaOx/n-Si Structure for Access Device-Free High-Density Memory Application.

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Influence of Metal Electrode on the Performance of ZnO Based Resistance Switching Memories