Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Forming-Free HfO x -Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Modulating the resistive switching stability of HfO2-based RRAM through Gd doping engineering: DFT+U

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Electroforming-Free and Highly Uniform Al2o3 Resistive Random Access Memory by Ald-Based in Situ Hydrogen Plasma Treatment

Gd-Doping Effect On Performance Of Hfo2 Based Resistive Switching Memory Devices Using Implantation Approach

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Forming-Free HfO 2 -Based Resistive Random Access Memory by X-Ray Irradiation

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching