Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Conduction Mechanism and Improved Endurance in HfO 2 -Based RRAM with Nitridation Treatment

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Improvement of Resistive Switching Uniformity in TiOx Film by Nitrogen Annealing

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Effects of Different Dopants on Switching Behavior of HfO2-based Resistive Random Access Memory

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Endurance improvement technology with nitrogen implanted in the interface of WSiOx resistance switching device

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Effects of Interaction Between Defects on the Uniformity of Doping HfO2-based RRAM: a First Principle Study

Gd-Doping Effect On Performance Of Hfo2 Based Resistive Switching Memory Devices Using Implantation Approach

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

Modulating the resistive switching stability of HfO2-based RRAM through Gd doping engineering: DFT+U