Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti Electrode

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Compliance Current Effect on Switching Behavior of Hafnium Oxide Based RRAM

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Improvement of Resistive Switching Uniformity in TiOx Film by Nitrogen Annealing

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory

Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

Effect of Annealing Conditions on Resistive Switching in Hafnium Oxide-based MIM Devices for Low-power RRAM

High-Resistance State Reduction During Initial Cycles of AlO X N Y -Based RRAM

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures