Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Optimization of the Cycle Numbers of TiO2 Resistive Random-Access Memory Devices by Annealing

Optimization of the Cycle Numbers of TiO 2 Resistive Random-Access Memory Devices by Annealing

Study of the Bipolar Resistive‐switching Behaviors in Pt/GdOx/TaNx Structure for RRAM Application

The Improved Resistive Switching Properties of TaOx-based RRAM Devices by Using WNx As Bottom Electrode

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

In-depth Understanding of Physical Mechanism of the Gradual Switching in AlOxNy-based RRAM As Memory and Synapse Device

Thin TiOx Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta2O5/Ta Resistance Switching Memory.

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Switching Mechanism Transition Induced by Annealing Treatment in Nonvolatile Cu/Zno/Cu/Zno/Pt Resistive Memory: from Carrier Trapping/Detrapping to Electrochemical Metallization

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Synergistic Resistive Switching Mechanism Of Oxygen Vacancies And Metal Interstitials In Ta2o5

Oxygen Migration Induced Resistive Switching Effect And Its Thermal Stability In W/Taox/Pt Structure

Improving HfO 2 -Based Resistive Switching Devices by Inserting a TaO x Thin Film via Engineered In Situ Oxidation

Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior

Effects of annealing temperatures on resistive switching characteristics of TiO2 based ReRAM