Abstract:As one of the emerging memory device, Ta 2 O 5 based RRAM has shown various outstanding features, such as low power consumption, high reliability and excellent scalability. In Ta 2 O 5 RRAM, the formation and the migration of oxygen vacancies are crucial to the resistive switching characteristics, reliability and uniformity of the device. In this paper, we used the first-principle simulation to study the properties of oxygen vacancies including forming energy and migration barrier in amorphous tantalum pentoxide. The β-Ta 2 O 5 supercell was built and annealing algorithm was used for generating amorphous Ta 2 O 5 in Material Studio. The band structure and DOS of both materials were studied by Vienna Ab initio simulation program (VASP). We also calculated the formation energy and migration barrier of oxygen vacancies, and discussed the mechanism of conductive path formation in amorphous Ta 2 O 5 . Finally, we proposed a new microscopic model of resistive switching mechanism in amorphous Ta 2 O 5 RRAM device.

Thermal impact on the resistance switching properties in tantalum oxide based RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Microscopic Origin of Read Current Noise in TaOx-based Resistive Switching Memory by Ultra-Low Temperature Measurement

Novel bipolar TaOx-based Resistive Random Access Memory

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Investigation of Resistive Switching in Bipolar Taox-Based Resistive Random Access Memory

Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations

Enhanced Resistive Switching Performance of Aluminum Oxide Dielectric with a Low Temperature Solution-Processed Method

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Effect of Oxygen Profiles on the RS Characteristics of Bilayer TaOx/TaOy Based RRAM

Study on High-Resistance State Instability of TaOx-Based RRAM

Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

Co-existed Unipolar and Bipolar Resistive Switching Effect of HfOx-based RRAM

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures