Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Study on High-Resistance State Instability of TaOx-Based RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Short Time High-Resistance State Instability of TaOx-Based RRAM Devices

Investigation on High Resistance Variation of Bi-layer TaO<inf>x</inf>/HfO<inf>2</inf> RRAM Devices

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Investigation on High Resistance Variation of Bi-layer TaO<sub>x</sub>/HfO<sub>2</sub> RRAM Devices

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Switching and Failure Mechanism of Self-Selective Cell in 3D VRRAM by RTN-Based Defect Tracking Technique

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Ta0x/Hf02-based RRAM with Self-Selective Feature Caused by Current Compliance Modulation

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Relaxation Effect in RRAM Arrays: Demonstration and Characteristics

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Microscopic Origin of Read Current Noise in TaOx-based Resistive Switching Memory by Ultra-Low Temperature Measurement

Oxide-based RRAM: Physical based retention projection

Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Electrical and testing reliability of CuxO based RRAM