Abstract:Multi-level cell storage technology based on resistive random access memory (RRAM) with multi-level state characteristics is more attractive in achieving low-cost ultra-high-density nonvolatile memory. Although a large number of literatures have reported the multi-level state characteristics of RRAM, so far there is no unified model that can well explain the intrinsic reasons for the existence of intermediate resistance state (IRS) and the switching mechanism between different resistance states. Multi-level state characteristics are observed by I-V characteristic measurements on RRAM with TiN/HfOx/barrier layer/TiN stacks fabricated using a commercialized 28 nm CMOS process. Compared to other published resistive switching models, the proposed model based on trap-assisted tunneling is more consistent with the measured. The model can reproduce the multi-level state characteristics based on the mechanism that interaction between defects and oxygen vacancies at the interface of HfOx and TiN electrode, resulting in the formation of multiple weak conductive filaments. Furthermore, the wide spread of high resistance state (HRS) and the switching between HRS and IRS are determined by the distance of tunneling gap. As HfOx-based RRAM will soon be commercialized, it is becoming very urgent to clarify the switching mechanisms of multi-level state characteristics and propose a universal model. Consequently, this work satisfied the current demand and significantly advanced the understanding and development of commercialized, cost-effective, high-density multi-bit HfOx-based RRAM technology.

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Analysis of RTN Signals in Resistive-Switching RAM Device and Its Correlation with Device Operations

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Unveiling the Switching Mechanism of a TaO X /hfo 2 Self-Selective Cell by Probing the Trap Profiles with RTN Measurements

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Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

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Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

Investigation of Preexisting and Generated Defects in Nonfilamentary A-Si/tio2 RRAM and Their Impacts on RTN Amplitude Distribution

Uniform 3d Vertical Alo Delta/Ta2o5-X/Taoy Rram: Fabrication, Characterization And Mechanism Analysis

Resistive Switching Physical Mechanism of RRAM

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