Abstract:Complementary resistive switching (CRS) in single devices without internal electrodes is attractive in high-density memory applications because it simplifies fabrication and avoids the complicated controlling and matching needed when using two resistive switching (RS) devices, as in conventional CRS devices. To improve the performance of such devices, however, the CRS mechanism must be understood further. Here, the authors report on voltage-amplitude-controlled CRS and self-compliance opposite-polarity bipolar RS in Pt/HfO2/HfOx/Pt memory devices. In these devices, CRS showed an almost symmetrical current-voltage hysteresis loop. Both the set voltages and hopping conduction mechanism of the high resistance states in both the bipolar RS were consistent with those of the CRS. An excess current beyond Ohmic conduction appeared before the reset switching in the bipolar RS. To interpret the characteristics of the CRS and bipolar RS, the authors propose a slender conductive filament model. According to this model, a limited oxygen vacancy (V-o) source, high Vo diffusion barrier, small film thickness, and concentrated electric field all contribute to the formation of slender filaments and to CRS operations. The model also suggests that a slender filament might form in a layer of multilayer junctions, which allows for different layers to play specific roles and improve device performance. (C) 2017 American Vacuum Society.

Complementary Switching in 3D Resistive Memory Array

Voltage-amplitude-controlled Complementary and Self-Compliance Bipolar Resistive Switching of Slender Filaments in Pt/HfO2/HfOx/Pt Memory Devices

Dynamic Evolution Process from Bipolar to Complementary Resistive Switching in Non-Inert Electrode RRAM

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory

Complementary Resistive Switching Behavior Induced by Varying Forming Current Compliance in Resistance Random Access Memory

Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices

Design and Demonstration of Cu/Al2O3/Cu RRAM with Complementary Resistance Switching Characteristic

Multi-mode Resistive Switching Behaviors Induced by Modifying Ti Interlayer Thickness and Operation Scheme

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory.

Complementary Resistive Switching in Flexible RRAM Devices

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits

A Resistive Device with Electrolyte As Active Electrode

Switching and Failure Mechanism of Self-Selective Cell in 3D VRRAM by RTN-Based Defect Tracking Technique

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO 2 /Pt RRAM.

Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)