Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Physical mechanism of resistive switching and optimization design of cell in oxide-based RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-Rram.

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Engineering Oxide Resistive Switching Materials for Memristive Device Application

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Study of the Bipolar Resistive‐switching Behaviors in Pt/GdOx/TaNx Structure for RRAM Application

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Oxide-based RRAM Switching Mechanism: A New Ion-Transport-recombination Model

Physical mechanisms of endurance degradation in TMO-RRAM

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Resistive Switching Physical Mechanism of RRAM

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process