Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-Rram.

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Resistance Switching for RRAM Applications.

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

Resistive Switching Materials for Information Processing

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Recent advances in inorganic oxides-based resistive random-access memory devices

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Novel Concepts In Functional Resistive Switching Memories

The storage mechanism of resisitive random access

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

An Overview of Resistive Random Access Memory Devices

Progress in Development of Resistive RAM and Its Integration Technology

Resistive Random Access Memory for Future Information Processing System.

Recent Progress in Resistive Random Access Memories: Materials, Switching Mechanisms, and Performance

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory