Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Yudi Zhao,Peng Huang,Zhe Chen,Chen Liu,Haitong Li,Bing Chen,Wenjia Ma,Feifei Zhang,Bin Gao,Xiaoyan Liu,Jinfeng Kang

DOI: https://doi.org/10.1109/ted.2016.2532470

2016-01-01

Abstract:A comprehensive physical model on the resistive switching (RS) behaviors of bilayered TaOx-based RS access memory [resistive random access memory (RRAM)] is presented. In the model, the effects of the generation and recombination (G-R) of oxygen vacancies (V-O), phase transition (P-T) between Ta2O5 and TaO2, and the interaction (I-A) between Ta2O5 and TaOx layers are involved to explain the RS behaviors based on ab initio calculations. An atomistic Monte Carlo simulation method based on the model is developed to investigate the dynamic physical processes and reproduce the experimental phenomena. The impacts of G-R and P-T as well as the I-A effects on the RS behaviors of a bilayered Ta2O5/TaOx structure and the device performances are identified. This paper indicates that the G-R effect dominates the RS behaviors, and self-compliance is due to the I-A effect. Based on the simulations, the optimization guidance of a bilayered TaOx-based RRAM is presented.