Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Ionic Doping Effect In Zro2 Resistive Switching Memory

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Modulating the resistive switching stability of HfO2-based RRAM through Gd doping engineering: DFT+U

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Doping technology: An effective way to improve the performances of resistive switching memory

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

Study on High-Resistance State Instability of TaOx-Based RRAM

Forming-Less Unipolar Taox-Based Rram with Large Cc-Independence Range for High Density Memory Applications

Random telegraph noise and resistance switching analysis of oxide based resistive memory.