Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Doping technology: An effective way to improve the performances of resistive switching memory

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Resistive Switching Performance Improvement Of Ta2o5-X/Taoy Bilayer Reram Devices By Inserting Alo Delta Barrier Layer

Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material

Effect of Oxygen Profiles on the RS Characteristics of Bilayer TaOx/TaOy Based RRAM

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Effects of Interaction Between Defects on the Uniformity of Doping HfO2-based RRAM: a First Principle Study

Effects of Different Dopants on Switching Behavior of HfO2-based Resistive Random Access Memory

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects