Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Effects of Interaction Between Defects on the Uniformity of Doping HfO2-based RRAM: a First Principle Study

Ionic Doping Effect In Zro2 Resistive Switching Memory

Improved Uniformity and Excellent Endurance Characteristics of TaOx-Based RRAM by Laser-Mediated Interface Engineering

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Improved Uniformity of TaOx-Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Formation Energy Study of Oxygen Vacancies in Undoped, Aluminum-Doped and Nitrogen-Doped Taox-Based RRAM by First Principle Simulation

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

High-density WOx-based RRAM with a W-doped AlOx insertion layer