Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material

HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention.

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Effects of Interaction Between Defects on the Uniformity of Doping HfO2-based RRAM: a First Principle Study

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

Study on High-Resistance State Instability of TaOx-Based RRAM

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.