Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Conduction Mechanism and Improved Endurance in HfO 2 -Based RRAM with Nitridation Treatment

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface

Experimental Investigation of the Scalability of RRAM Device with Pt/[HfO<inf>x</inf>/AlO<inf>y</inf>]<inf>m</inf>/TiN Structure

High Performance Multilevel Data Storage in Tatin/Hfox/Pt Based Rram Using Bipolar and Unipolar Combined Switching Mode

High-density WOx-based RRAM with a W-doped AlOx insertion layer

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Experimental Investigation Of The Scalability Of Rram Device With Pt/[Hfox/Aloy](M)/Tin Structure

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Rectifying Characteristics and Implementation of N-Si/hfo2 Based Devices for 1D1r-Based Cross-Bar Memory Array

Improved Uniformity and Excellent Endurance Characteristics of TaOx-Based RRAM by Laser-Mediated Interface Engineering

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect