Experimental Investigation of the Scalability of RRAM Device with Pt/[HfO<inf>x</inf>/AlO<inf>y</inf>]<inf>m</inf>/TiN Structure

Wensheng Shen,Peng Huang,Yulin Feng,Zheng Zhou,Dongbin Zhu,Lifeng Liu,Jinfeng Kang,Xing Zhang
DOI: https://doi.org/10.1109/ICSICT.2018.8564856
2018-01-01
Abstract:In order to investigate the scalability of RRAM device, different RRAM cells from 50 μm to 50 nm with Pt/[HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> ] <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> /TiN structure were fabricated. Scaling trends of forming and resistive switching characteristics are experimentally presented. With cell area scaling down, forming voltage increases severely, while set voltage shows no obvious difference. Devices keep the same switching performances while scaling, such as resistance window and uniformity. In order to solve the vital issue of increased forming voltage, an effective method of increasing the temperature during forming process to reduce forming voltage is proposed and experimentally demonstrated.
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