Abstract:Resistive random access memory (RRAM) devices are being investigated extensively for future nonvolatile memories using various transition metal oxides like NiO, ZnO, TiO 2 , and HfO 2 as the active material. Here, we have demonstrated the performance of RRAM devices using HfO 2 thin films deposited by the ion beam sputtering technique on p ++ -Si (100) substrate with varying thickness from 10 to 30 nm. The density of these films is calculated to be in the range of 9.1-8.6 g/cm 3 . A drastic change in the average grain size from ∼90 to ∼2000 nm is noticed when the thickness is increased from 20 to 30 nm. We observe a structural transformation from orthorhombic to a dominant monoclinic phase with an increase in thickness from 20 to 30 nm, although a small fraction of the orthorhombic phase remains present in the later film. The phase transformation is accompanied by a significant increase in the average grain size along with a decrease in the oxygen vacancy, as observed from X-ray photoelectron spectroscopy. Further, a red shift in the absorption peak and a reduced band gap of HfO 2 film having 30 nm thickness well corroborates with the above fact. We examine the bipolar forming-free resistive switching performance of the RRAM devices fabricated using these films by measuring 100 I–V cycles. Among all films, the film of 20 nm thickness shows better switching behavior with an ON/OFF ratio of ∼7 attributed to the appropriate grain size, enhanced crystallization, and oxygen vacancies. The endurance and retention measurements show the excellent reliability of the 20 nm thick device. Schematically, the switching mechanism has been discussed based on the Ohmic and Poole-Frenkel conduction models, which is attributed to the formation and rupture of conductive filaments consisting of oxygen vacancies.

Effect Of Tiox Film Thickness On Resistive Switching Behavior Of Tin/Tiox/Hfo2/Pt Rram Device

Effect of TiO<inf>x</inf> Film Thickness on Resistive Switching Behavior of TiN/TiO<inf>x</inf>/HfO<inf>2</inf>/Pt RRAM Device

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Electrode-Induced Digital-To-Analog Resistive Switching in Taox-Based Rram Devices

Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM Devices for Neuromorphic Applications

Thickness dependent phase transformation and resistive switching performance of HfO 2 thin films

Experimental Investigation of the Scalability of RRAM Device with Pt/[HfO<inf>x</inf>/AlO<inf>y</inf>]<inf>m</inf>/TiN Structure

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states