Influence of Non-Inert Electrode Thickness on the Performance of Complementary Resistive Switching in AlOxNy-based RRAM
Yiwei Duan,Haixia Gao,Mengyi Qian,Yuxin Sun,Shuliang Wu,Jingshu Guo,Mei Yang,Xiaohua Ma,Yintang Yang
DOI: https://doi.org/10.1063/5.0102030
IF: 4
2022-01-01
Applied Physics Letters
Abstract:This Letter investigates the effect of non-inert electrode thickness on the performance of complementary resistive switching (CRS). Five devices with different Ta electrode thicknesses (0, 2, 5, 10, and 20-nm) are fabricated. For devices with 2, 5, and 10-nm electrode thicknesses, CRS behavior can be obtained through an evolution process, while devices with 0 and 20-nm Ta electrode thicknesses always maintain stable bipolar resistive switching behavior. By analyzing the evolution process and current conduction mechanisms, the influence of non-inert electrode thickness on the performance of CRS is studied, and different oxidation degrees of a non-inert electrode are used to explain the different resistive switching performance in these devices. Aside from that, the model is verified by applying an asymmetric voltage sweeping method. This paper further clarifies the physical mechanism of CRS behavior in non-inert electrode resistive random access memory and provides a way to optimize the performance of CRS behavior.