Abstract:This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox‐based random access memory cell. The application of a powerful analysis tool to an accurate physics‐based device model enables to understand the complex mechanisms, which induce memory loss in the non‐volatile memristor under both SET and RESET stimuli, opening up new interesting application scenarios. The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predictive physics‐based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non‐volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady‐state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely‐AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox‐based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics‐based device model, called JART VCM v1, a thorough system‐theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Self-compliance Characteristics and Switching Degradation in TaO X -Based Memristors

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Set Transition Statistics of Different Switching Regimes of TaOx Memristor

Engineering resistive switching behavior in TAO<inf>x</inf> based memristive devices for non-von Neuman computing applications

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

In-depth Understanding of Physical Mechanism of the Gradual Switching in AlOxNy-based RRAM As Memory and Synapse Device

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Sub-10 Nm Ta Channel Responsible For Superior Performance Of A Hfo2 Memristor

Engineering Incremental Resistive Switching in TaOx Based Memristors for Brain-Inspired Computing.

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Investigation of the TaOx Unipolar Switching Memory on High Efficiency Computing

State Dynamics and Modeling of Tantalum Oxide Memristors

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Electrode-material dependent switching in TaO x memristors

Reset Switching Statistics of TaOx-Based Memristor