Abstract:This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox‐based random access memory cell. The application of a powerful analysis tool to an accurate physics‐based device model enables to understand the complex mechanisms, which induce memory loss in the non‐volatile memristor under both SET and RESET stimuli, opening up new interesting application scenarios. The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predictive physics‐based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non‐volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady‐state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely‐AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox‐based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics‐based device model, called JART VCM v1, a thorough system‐theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.

Reset Switching Statistics of TaOx-Based Memristor

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Set Transition Statistics of Different Switching Regimes of TaOx Memristor

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Statistical characteristics of reset switching in Cu/HfO 2 /Pt resistive switching memory

Statistical Approach to the Reset Switching of the Hfo2-Based Solid Electrolyte Memory

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution (Adv. Mater. 41/2023)

Electrode-material dependent switching in TaO x memristors

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Oxygen vacancies kinetics in $TaO_{2-h}$/$Ta_{2}$$O_{5-x}$ memristive interfaces

Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor

Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition.

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Voltage Divider Effect for the Improvement of Variability and Endurance of TaOx Memristor

State Dynamics and Modeling of Tantalum Oxide Memristors

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices