Abstract:This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox‐based random access memory cell. The application of a powerful analysis tool to an accurate physics‐based device model enables to understand the complex mechanisms, which induce memory loss in the non‐volatile memristor under both SET and RESET stimuli, opening up new interesting application scenarios. The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predictive physics‐based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non‐volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady‐state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely‐AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox‐based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics‐based device model, called JART VCM v1, a thorough system‐theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.

Voltage Divider Effect for the Improvement of Variability and Endurance of TaOx Memristor

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Set Transition Statistics of Different Switching Regimes of TaOx Memristor

Improved Uniformity of TaOx-Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Reset Switching Statistics of TaOx-Based Memristor

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Oxygen vacancies kinetics in $TaO_{2-h}$/$Ta_{2}$$O_{5-x}$ memristive interfaces

Engineering Incremental Resistive Switching in TaOx Based Memristors for Brain-Inspired Computing.

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta 2 O 5 /Al 2 O 3 /TiN Memristors

Oxygen vacancies kinetics in TaO /Ta O memristive interfaces

State Dynamics and Modeling of Tantalum Oxide Memristors

Low Variability Resistor–Memristor Circuit Masking the Actual Memristor States

Electrode-material dependent switching in TaO x memristors

High Switching Endurance in Taox Memristive Devices

Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides

Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer