Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

A Highly Reliable Molybdenum Disulfide-Based Synaptic Memristor Using a Copper Migration-Controlled Structure

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

High‐Entropy Oxides‐Based Memristor: Outstanding Resistive Switching Performances And Mechanisms in Atomic Structural Evolution

Robust memristors based on layered two-dimensional materials

Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory Array

Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure

High-Performance 2D Ambipolar MoTe2 Lateral Memristors by Mild Oxidation

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution (Adv. Mater. 41/2023)

Crystallinity‐controlled volatility tuning of ZrO2 memristor for physical reservoir computing

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Highly Stable HfO2 Memristors Through Van Der Waals Electrode Lamination and Delamination.

Nonvolatile behavior of resistive switching memory in Ag/WO x /TiO y /ITO device based on WO x /TiO y heterojunction

A Metal Oxide Heterostructure for Resistive Random Access Memory Devices

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model