Abstract:Organic–inorganic hybrid halide perovskites (OHHPs) offer excellent resistive switching (RS) properties, making them candidates for applications involving low-cost, flexible memories. However, compared with the operational stability of traditional oxide-based RS materials, the operational stability (in terms of endurance and retention) of OHHPs remains an obstacle to their use in RS memories. This paper reports an RS memory with reliable nonvolatile bipolar RS characteristics; the resistive layer is fabricated using a triple-cation perovskite owing to its structural stability and low sensitivity to the atmosphere. These devices offer operational stability over 103 endurance cycles and a retention time of up to 105 s through an adjustable forming process, which exceeds that of the most previous reports for OHHP-based RS memories with electrodes of Au, graphene, and Al. To better understand the RS mechanism, we simulated the evolution of iodine vacancies using a kinetic Monte Carlo model to elucidate the dynamics of conductive filaments and the device-failure mechanism. The results of this study should improve the stability and increase the understanding of the RS mechanism of OHHP-based memories.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00674?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00674</a>.AFM image, forming processes with negative voltage sweep, forming voltages for different forming conditions, dependence of forming voltage on perovskite thickness, resistances of HRS/LRS and the voltages of SET/RESET for different forming conditions, summary of the performance of RRAM devices based on halide perovskites, PL spectra of films with and without forming processes, flow of kinetic Monte Carlo simulation, measured and simulated fitting of forming I–V curves, and measured and simulated distribution of forming and SET voltages for different forming conditions (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00674/suppl_file/el0c00674_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory Array

MAPbBr 3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time

Linearly programmable two-dimensional halide perovskite memristor arrays for neuromorphic computing

Strongly stable resistive random access memory based on quasi-two-dimensional perovskites

Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

High-performance and humidity robust multilevel lead-free all-inorganic Cs3Cu2Br5 perovskite-based memristors

Two-dimensional triphenylamine-based polymers for ultrastable volatile memory with ultrahigh on/off ratio

Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

Organometal tri-halide perovskite resistive switching device with PMMA electrode interlayer

Robust mica perovskite photoelectric resistive switching memory

Highly stable two-dimensional Ruddlesden-Popper perovskite-based resistive switching memory devices

Two-dimensional materials based volatile memristors mediated by flexoelectric effect

Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing

Triple-Cation Perovskite Resistive Switching Memory with Enhanced Endurance and Retention

Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing

Rare earth halide double perovskites for high-performance resistive random access memory