Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

Highly Controllable Multilevel Performance in WS2 Quantum Dots-Based Memristor

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

High performance and low power consumption resistive random access memory with Ag/Fe<sub>2</sub>O<sub>3</sub>/Pt structure

ing to achieve organic ternary memory with a high device yield and improved performance †

A Very Reliable Multilevel YSZ Resistive Switching Memory

Methodology for Stability Evaluation on the Multi-Level Storages of Oxide-Based Conductive Bridge Ram (Cbram)

Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory

A Flexible Nickel Phthalocyanine Resistive Random Access Memory with Multi-Level Data Storage Capability

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Low‐Energy Oxygen Plasma Injection of 2D Bi 2 Se 3 Realizes Highly Controllable Resistive Random Access Memory

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

High Performance Low Power Multilevel Oxide Based RRAM Devices Based on TiOxNy/Ga2O3 Hybrid Structure

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory