ing to achieve organic ternary memory with a high device yield and improved performance †
Xiang Hou,Xin Xiao,Qian-Hao Zhou,Xue-Feng Cheng,Jing-Hui He,Qing-Feng Xu,Hua Li,Na-Jun Li,Dong-Yun Chen,Jian-Mei Lu
2017-01-01
Abstract:The information explosion inmodern society requires increasingly higher densities in data storage, which is gradually becoming difficult to achieve through traditional binary memory techniques. Resistance switching random access memory (RRAM), as a promising high-density memory solution, is gradually attracting both fundamental and industrial interest. RRAMs consist of two electrodes sandwiching a thin layer of active material that, under an external electric eld, possesses different conductive states, which are considered “0” or “1” for information storage. In addition, due to their simple three-layers structure, RRAMs can be used for three-dimensional stacking and can dramatically expand the information density. Most importantly, if multiple conductive states exist in the active materials, each memory cell can store more than two states, such as “0”, “1”, “2”.. This multilevel RRAM technique is expected to result in a revolutionary enhancement in the information density from 2 to X (where n is the cell density and X is the state number of each cell). Aer decades of intensive research, many inorganic oxides, polymers and small molecules have been found to exhibit multilevel resistive switching behaviours and are thus considered candidate active materials for multilevel RRAMs. However, to enable industrial use, RRAM devices must show good reproducibility, including a high multilevel memory device yield and narrow distribution of OFF/ON1/ON2 switching voltages. Unfortunately, numerous studies have explored new RRAM active materials based on the measurements on individual devices, but statistical data on a large batch are rarely reported. Our recent statistical work demonstrated that