Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

High Performance Multilevel Data Storage in Tatin/Hfox/Pt Based Rram Using Bipolar and Unipolar Combined Switching Mode

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Defect Engineering in Multilayer H-Bn Based RRAM by Localized Helium Ion Irradiation

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

ing to achieve organic ternary memory with a high device yield and improved performance †

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Highly Controllable Multilevel Performance in WS2 Quantum Dots-Based Memristor

Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

Progress of Cation-Based Resistive Random Access Memory