Abstract:Abstract Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2− x systems such as HfO 2− x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

Defect Engineering in Multilayer H-Bn Based RRAM by Localized Helium Ion Irradiation

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

Introduction of Defects in Hexagonal Boron Nitride for Vacancy-Based 2D Memristors.

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Engineering of defects in resistive random access memory devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

MECHANISMS AND MODELING OF 2D-MATERIALS-BASED RESISTIVE RANDOM ACCESS MEMORY DEVICES (INVITED REVIEW)

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Tubular 3D Resistive Random Access Memory Based on Rolled-Up h-BN Tube.

Large-area multilayer molybdenum disulfide for 2D memristors

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices