Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Engineering of defects in resistive random access memory devices

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Influence of Defects on the Resistive Switching Mechanism of RRAM

Defect Engineering in Multilayer H-Bn Based RRAM by Localized Helium Ion Irradiation

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

Modeling of High and Low Resistant States in Single Defect Atomristors

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

An Overview of Resistive Random Access Memory Devices

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Resistive Switching Physical Mechanism of RRAM

The storage mechanism of resisitive random access

Resistance Switching for RRAM Applications.

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Effects of Interaction Between Defects on the Uniformity of Doping HfO2-based RRAM: a First Principle Study

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Engineering Oxide Resistive Switching Materials for Memristive Device Application