Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Tsung-Ming Tsai,Cheng-Hsien Wu,Chang,Chih-Hung Pan,Po-Hsun Chen,Ni-Ke Lin,Jiun-Chiu Lin,Yu-Shuo Lin,Wen-Chung Chen,Huaqiang Wu,Ning Deng,He Qian

DOI: https://doi.org/10.1109/led.2017.2664881

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:In this letter, we propose a resistive switching memory with outstanding comprehensive performance by inserting buffer layers of silicon dioxide doped with boron nitride (BN: SiO2 into HfO resistance random access memory (RRAM). X-ray photoelectron spectroscopy (XPS) spectra confirms that hexagonal boron nitride (h-BN) exists in the BN: SiO2 layer. The Pt/BN: SiO2/HfO/BN: SiO2/TiN structure was observed to have superior switching endurance > 10(12) cycles) and higher stability. This can be attributed to the oxygen ions generated during the forming process being localized by h-BN flakes which are formed during the sputter process. Aphysicalmodel is proposedto explain the resistive switching behavior of HfO RRAM with the inserted BN-based layers.