Resistive Switching of Self-Assembly Stacked H-Bn Polycrystal Film

Tangyou Sun,Jie Tu,Zhiping Zhou,Rong Sun,Xiaowen Zhang,Haiou Li,Zhimou Xu,Ying Peng,Xingpeng Liu,Peihua Wangyang,Zhongchang Wang

DOI: https://doi.org/10.1016/j.xcrp.2022.100939

IF: 8.9

2022-01-01

Cell Reports Physical Science

Abstract:Two-dimensional materials resistive random-access memories (RRAMs) are known to exhibit excellent nonvolatile resistive switching (NVRS) performance. However, most two-dimensional materials are produced as monocrystal films with little attention paid to their stacked, discontinuous, and loose polycrystal states, which may allow for more facile atomic diffusion. Here, we propose a liquid-phase self-assembly (LPSA) method to fabricate stacked hexagonal boron nitride (h-BN) polycrystal film (SHPF) and demonstrate its NVRS behavior. Three device architectures with different electrodes are studied, all of which exhibit resistive switching behaviors. The Al/h-BN/Pt device shows 120 current-voltage (I-V) sweeps without degradation, and the Al/h-BN/ITO device exhibits an on/off ratio of ∼104. The proposed LPSA method can serve as a facile and low-cost way to fabricate memory materials on arbitrary substrates. Moreover, stacked, discontinuous, and loose polycrystal film can facilitate the study of NVRS, which opens up an additional avenue for many potential functional applications.