Abstract:Resistive switching materials and devices have received unparalleled recent attention due their potential and demonstrated use as resistive random access memory (RRAM) and neuromorphic applications. Resistive switching or memristive materials can serve as two-terminal electrical components where the resistance is a function of the amount and direction of current previously experienced and therefore they can uniquely emulate biological synapse behavior. HfO2 is a well-known dielectric and memristive material that has been previously explored for RRAM applications. Here, to better understand the resistive switching in harfnia in the presence of insulating interfaces, the electrical properties of HfO2/ZrO2 nanolayer stacks are discussed. The stacks with total thickness of 16 nm were prepared on platinized Si substrates using atomic layer deposition (ALD). A capping layer of TiN (30 nm thick) and a Au top electrode (100 nm thick) were sputtered to complete the device. We will discuss the current-voltage behavior, pulse time mode measurements, retention and endurance tests of the devices. Resistive switching was observed in all multilayer samples, with the set voltage (Vset) decreasing with increasing number of layers (i.e., number of hafnia-zirconia interfaces). We will show that grazing incidence x-ray diffraction (GI-XRD) demonstrated the transition of the hafnia phase from monoclinic to orthorhombic structure during the post metallization annealing, and that shifts in the binding energy of the x-ray photoelectron spectroscopy spectra (XPS) imply the existence of hafnia suboxide (HfO2-δ). More importantly, we will show how memristive/insulating nanostructures like nanolayered HfO2/ZrO2 can help modulate the resistive switching of memristive-based devices, to include for example, a two-step electroforming process, and multistate resistive switching.

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Resistive Switching Properties Of Plasma Enhanced-Ald La2o3 For Novel Nonvolatile Memory Application

Polymerized Hybrid Hf-based Hydroquinone/al2o3 Bilayer Structure by Molecular/atomic Layer Deposition for Non-Volatile Resistive Random Access Memory

Reliable Resistive Switching Behaviour of Ag/Ta2O5/Al2O3/p++-Si Memory Device

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

High-performance Bilayer Flexible Resistive Random Access Memory Based on Low-Temperature Thermal Atomic Layer Deposition

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Highly uniform bipolar resistive switching with Al2}O 3 buffer layer in robust NbAlO-based RRAM

Resistive Switching in Atomic Layer Deposited HfO2/ZrO2 Nanolayer Stacks

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-Situ Transmission Electron Microscopy

Stable and reliable IGZO resistive switching device with HfAlOx interfacial layer

Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure

Al2O3/HfO2 Functional Stack Films Based Resistive Switching Memories with Controlled SET and RESET Voltages