Well Controlled Multiple Resistive Switching States in the Al Local Doped Hfo2 Resistive Random Access Memory Device

Y. S. Chen,B. Chen,B. Gao,L. F. Liu,X. Y. Liu,J. F. Kang

DOI: https://doi.org/10.1063/1.4803076

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:The resistive switching behaviors in the sandwiched Ti/HfO2/Pt devices with different doping condition were systematically investigated. We show that, comparing with the undoped and the Al layer doped HfO2 devices, significant improvement of switching characteristics is achieved in the Al local doped HfO2 device, including uniformity, reliability, and operation current. As a result, well controlled multiple switching states are obtained in the local doping device by modulating the set current compliance or the maximal reset voltage, respectively. Our results suggest that the switching characteristics of HfO2 device are very closely related to the inducement and controlling of conductive filaments’ growth in the dielectric layer, which can be considered in the optimization of resistive random access memory device design.