Abstract:Resistive switching materials and devices have received unparalleled recent attention due their potential and demonstrated use as resistive random access memory (RRAM) and neuromorphic applications. Resistive switching or memristive materials can serve as two-terminal electrical components where the resistance is a function of the amount and direction of current previously experienced and therefore they can uniquely emulate biological synapse behavior. HfO2 is a well-known dielectric and memristive material that has been previously explored for RRAM applications. Here, to better understand the resistive switching in harfnia in the presence of insulating interfaces, the electrical properties of HfO2/ZrO2 nanolayer stacks are discussed. The stacks with total thickness of 16 nm were prepared on platinized Si substrates using atomic layer deposition (ALD). A capping layer of TiN (30 nm thick) and a Au top electrode (100 nm thick) were sputtered to complete the device. We will discuss the current-voltage behavior, pulse time mode measurements, retention and endurance tests of the devices. Resistive switching was observed in all multilayer samples, with the set voltage (Vset) decreasing with increasing number of layers (i.e., number of hafnia-zirconia interfaces). We will show that grazing incidence x-ray diffraction (GI-XRD) demonstrated the transition of the hafnia phase from monoclinic to orthorhombic structure during the post metallization annealing, and that shifts in the binding energy of the x-ray photoelectron spectroscopy spectra (XPS) imply the existence of hafnia suboxide (HfO2-δ). More importantly, we will show how memristive/insulating nanostructures like nanolayered HfO2/ZrO2 can help modulate the resistive switching of memristive-based devices, to include for example, a two-step electroforming process, and multistate resistive switching.

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Resistive Switching of Hfo2 Based Flexible Memories Fabricated by Low Temperature Atomic Layer Deposition

High-performance Bilayer Flexible Resistive Random Access Memory Based on Low-Temperature Thermal Atomic Layer Deposition

Well Controlled Multiple Resistive Switching States in the Al Local Doped Hfo2 Resistive Random Access Memory Device

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Polymerized Hybrid Hf-based Hydroquinone/al2o3 Bilayer Structure by Molecular/atomic Layer Deposition for Non-Volatile Resistive Random Access Memory

Improved Uniformity Of Resistive Switching Behaviors In Hfo2 Thin Films With Embedded Al Layers

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Stable and reliable IGZO resistive switching device with HfAlOx interfacial layer

Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

AlNxOy Film Prepared by Atomic Layer Deposition and Its Research in Resistive Random Access Memory

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

Resistive Switching in Atomic Layer Deposited HfO2/ZrO2 Nanolayer Stacks