Abstract:Resistive switching materials and devices have received unparalleled recent attention due their potential and demonstrated use as resistive random access memory (RRAM) and neuromorphic applications. Resistive switching or memristive materials can serve as two-terminal electrical components where the resistance is a function of the amount and direction of current previously experienced and therefore they can uniquely emulate biological synapse behavior. HfO2 is a well-known dielectric and memristive material that has been previously explored for RRAM applications. Here, to better understand the resistive switching in harfnia in the presence of insulating interfaces, the electrical properties of HfO2/ZrO2 nanolayer stacks are discussed. The stacks with total thickness of 16 nm were prepared on platinized Si substrates using atomic layer deposition (ALD). A capping layer of TiN (30 nm thick) and a Au top electrode (100 nm thick) were sputtered to complete the device. We will discuss the current-voltage behavior, pulse time mode measurements, retention and endurance tests of the devices. Resistive switching was observed in all multilayer samples, with the set voltage (Vset) decreasing with increasing number of layers (i.e., number of hafnia-zirconia interfaces). We will show that grazing incidence x-ray diffraction (GI-XRD) demonstrated the transition of the hafnia phase from monoclinic to orthorhombic structure during the post metallization annealing, and that shifts in the binding energy of the x-ray photoelectron spectroscopy spectra (XPS) imply the existence of hafnia suboxide (HfO2-δ). More importantly, we will show how memristive/insulating nanostructures like nanolayered HfO2/ZrO2 can help modulate the resistive switching of memristive-based devices, to include for example, a two-step electroforming process, and multistate resistive switching.

Atomic Layer Deposited Hf0.5zr0.5o2-Based Flexible Rram

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Fabrication of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1-x O 2 FeRAM and FeFET with Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Zinc-Alloyed HFO2 Synaptic RRAM with Operating Voltage and Switching Energy Enhancement

Improved Performance of HfxZnyO‐Based RRAM and Its Switching Characteristics Down to 4 K Temperature

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition

Resistive Switching of Hfo2 Based Flexible Memories Fabricated by Low Temperature Atomic Layer Deposition

High-performance Bilayer Flexible Resistive Random Access Memory Based on Low-Temperature Thermal Atomic Layer Deposition

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Resistive Switching in Atomic Layer Deposited HfO2/ZrO2 Nanolayer Stacks

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Al2O3/HfO2 Functional Stack Films Based Resistive Switching Memories with Controlled SET and RESET Voltages

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer