Abstract:Ferroelectric field effect transistor (FeFET) memories with hafnium zirconium oxide (HZO) ferroelectric gate dielectric and ultrathin InO (x) channel exhibit promising applicability in monolithic three-dimensional (M3D) integrated chips. However, the inferior stability of the devices severely limits their applications. In this work, we studied the effect of single cycle of atomic-layer-deposited Al-O bonds repeatedly embedded into an ultrathin InO (x) channel (similar to 2.8 nm) on the Hf0.45Zr0.55O (x) FeFET memory performance. Compared to the pure InO (x) channel, three cycles of Al-O bonds modified InO (x) channel (IAO-3) generates a much larger memory window (i.e. drain current ratio between the programmed and erased devices) under the same program conditions (+5.5 V/500 ns), especially after post-annealing at 325 degrees C for 180 s in O-2 (1238 versus 317). Meanwhile, the annealed IAO-3 FeFET memory also shows quite stable data retention up to 10(4) s, and much more robust program/erase stabilities till 10(5) cycles. This is because the modification of strong Al-O bonds stabilizes the oxygen vacancies and reduces the bulk trap density in the channel. Furthermore, it is indicated that the program and erase efficiencies increase gradually with reducing the channel length of the memory device. By demonstrating markedly improved performance of the HZO FeFET memory with the ultrathin IAO-3 channel, this work provides a promising device for M3D integratable logic and memory convergent systems.

Fabrication of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1-x O 2 FeRAM and FeFET with Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition

Atomic Layer Deposited Hf0.5zr0.5o2-Based Flexible Rram

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Significant Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Films by Inserting an Ultrathin Al2O3 Buffer Layer

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>10 12 ) for FeRAM Applications

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Effect of Al2O3 Insertion Layer on Ferroelectricity in HfO2/ZrO2 Nanolaminates

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers