Abstract:The effect of ZrO2 regulating layer (RL) on the ferroelectric properties of HfAlO film is investigated by using a combination of experiments and simulations. The results clearly demonstrate that ZrO2 RL can effectively facilitate the t‐phase to o‐phase transition and suppress the t‐phase to m‐phase transition, and thus contribute to increased remnant polarization intensity, uniformity, retention, endurance, and ON/OFF ratio. HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small compared to other Hf‐based ferroelectric films at low annealing temperatures. In order to further improve the remnant polarization of the device, the ferroelectric memory with metal‐ferroelectric‐metal structure using ZrO2 as the regulating layer (RL) is designed and fabricated. Experimental results show that the device with the ZrO2 regulating layer exhibits triple enhancement, which may be due to the fact that ZrO2 RL has an effect on the enhancement of the ferroelectric phase. In addition, the device with ZrO2 regulating layer exhibits a superior ON/OFF conductance ratio, endurance, and retention characteristics, demonstrating potential for application to memory. This work provides an effective way to improve the ferroelectricity in HfAlO films at low annealing temperatures.

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

HfO2-ZrO2 Superlattice Ferroelectric Capacitor with Improved Endurance Performance and Higher Fatigue Recovery Capability

La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>10 12 ) for FeRAM Applications

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Back-End of Line Compatible Hf 0.5 Zr 0.5 O 2 with ZrO 2 Seed Layer for Enhanced Ferroelectricity

HfO 2 -ZrO 2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films