Abstract:<p>The discovery of ferroelectricity in thin doped hafnium oxide films revived the interest in ferroelectric memory concepts. Zirconium doped hafnium oxide (HZO) crystalizes at low rapid thermal annealing (RTA) temperatures (e.g. 400°C), which makes this material interesting for the implementation of ferroelectric functionalities into the back‐end‐of‐line (BEoL) of modern integrated circuits. So far, the ferroelectric phase of prior amorphous HZO films is achieved by a dedicated RTA treatment. However, this article shows that such a dedicated anneal step is not needed. A sole furnace treatment within the thermal budget present during the interconnect‐formation is sufficient to functionalize even ultrathin 5 nm HZO films. This result will help to optimize the integration sequence of HZO films (e.g. involving a minimum number of BEoL process steps), which saves process time and fabrication costs. For this study, metal‐ferroelectric‐metal capacitors with HZO films of different thicknesses were annealed at 400 °C for various durations within different types of ovens (RTP, furnace). Structural and electrical characterization confirmed that all furnace‐annealed samples had similar X‐ray diffraction patterns, remanent polarization, endurances, and thickness‐dependencies as RTP‐annealed ones. The HZO film of 10 nm is most promising for the integration into the BEoL.</p><p>This article is protected by copyright. All rights reserved.</p>

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