Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Yin-Chi Liu,Yu-Chun Li,Ze-Yu Gu,Xin-Long Zhou,Teng Huang,Ze-Hui Li,Tian-Tian Pi,Yan-Fei Li,Shi-Jin Ding,Lin Chen,Hong-Liang Lu,Wen-Jun Liu
DOI: https://doi.org/10.1109/led.2023.3278291
IF: 4.8157
2023-01-01
IEEE Electron Device Letters
Abstract:In this letter, four ferroelectric (FE) capacitors with thickness dependent ZrO 2 seed layer (SL) were designed and fabricated at a low annealing temperature below 350 °C. By modulating the thickness of ZrO 2 SL, it is demonstrated that the FE capacitor with 1 nm ZrO 2 SL exhibits a superior remnant polarization ( $2{P} _{r}$ ) of $44.1 ~\mu \text{C}$ /cm 2 under 3 MV/cm at 1 kHz and $2{P} _{r}$ of $17.6 ~\mu \text{C}$ /cm 2 after $10^{{9}}$ cycles at 3 MV/cm. It is found that the 1 nm ZrO 2 SL provides more growth sites for the Hf 0.5 Zr 0.5 O 2 (HZO) thin films, and enhances the ratio of the ferroelectric phases during crystallization, thereby leading to enhancement of its ferroelectricity and reliability. This work provides a robust solution to improve both ferroelectricity and endurance for future ferroelectric device compatible with back end of line (BEOL) process.
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