Abstract:Compared to electrochemical energy storage, dielectric thin film-based capacitors possess the advantages of higher voltage stability and higher break-down voltage as well as lower leakage current etc. Since HfO 2 films are compatible to microelectronic process and its ferroelectricity is strategically important in memory device, the realization of their excellent energy storage comparable will broaden their applications in microelectronic devices. In this study, we utilized Al 3+ dopant, known for its smaller ionic radius compared to Hf 4+ , to induce lattice disorder in the Hf 0.5 Zr 0.5 O 2 films, facilitating transformation of the Hf 0.5 Zr 0.5 O 2 film from ferroelectric to antiferroelectric, and ultimately to a superparaelectric-like relaxation antiferroelectric behaviors. We have experimentally demonstrated that, by introduction of an appropriate Al doping level of x= 4.13%, the Hf 0.5 Zr 0.5 O 2 thin films with a relaxation antiferroelectric characteristic can achieve a corresponding recoverable energy density of more than 100 J cm −3 , an efficiency of more than 80%, and an effective enhancement of the dielectric strength to more than 6 MV cm −1 . Compared to HfO 2 -based amorphous/crystalline films reported previously, this is a record-high energy density in atomic layer deposited HfO 2 /ZrO 2 ternary doped oxides, and beyond that, we also demonstrate their superfast charging/discharging as a capacitor. Targeting at high-speed supercapacitor applications in integrated circuit, HfO 2 -based dielectric may win the competition with perovskite oxides in terms of dielectric breakdown strength and charging/discharging speed etc. Our fundamental understanding of the physics behind also enriches the knowledge of materials science and dielectric physics.

Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Superior and ultrafast energy storage performance of relaxorantiferroelectric HfO2-based supercapacitors

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Improved remnant polarization of Zr-doped HfO2 ferroelectric film by CF4/O2 plasma passivation

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

HfO2-ZrO2 Superlattice Ferroelectric Capacitor with Improved Endurance Performance and Higher Fatigue Recovery Capability

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Ferroelectric capacitors with triple level cell storage capability at low operating voltage by introducing TiN interlayer

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Superior and Ultrafast Energy Storage Performance of Relaxor-Antiferroelectric Hfo2-Based Supercapacitors

HfO 2 -ZrO 2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films